Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features

Andreas Tsiamis; S. Smith; M. McCallum; A. C. Hourd; O. Toublan; Tom Stevenson; A. J. Walton

Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features

Andreas Tsiamis, S. Smith, M. McCallum, A. C. Hourd, O. Toublan, Tom Stevenson, A. J. Walton

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

This paper reports the measurement results from a set of electrical, on-mask test structures based on industry standard test feature layouts normally used to investigate process proximity effects and improve optical proximity correction (OPC) models. The electrical test structures were fabricated on a binary photomask using the GHOST proximity correction technique to compensate for typical e-beam induced proximity errors. This is one of the first times that electrical test structures have been used to evaluate GHOST exposure. The test structures were measured electrically and optically with a dedicated photomask metrology tool and the results from the two techniques are presented.

Original language	English
Title of host publication	2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers
Pages	29-34
Number of pages	6
ISBN (Print)	978-1-4244-1800-8
Publication status	Published - 2008
Event	IEEE International Conference on Microelectronic Test Structures - Edinburgh Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	IEEE International Conference on Microelectronic Test Structures
City	Edinburgh
Period	24/03/08 → 27/03/08

IEEE International Conference on Microelectronic Test Structures
Stewart Smith (Chair)
24 Mar 2008 → 27 Mar 2008
Activity: Participating in or organising an event types › Participation in conference

Cite this

Tsiamis, A., Smith, S., McCallum, M., Hourd, A. C., Toublan, O., Stevenson, T., & Walton, A. J. (2008). Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features. In 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS (pp. 29-34). Institute of Electrical and Electronics Engineers.

@inproceedings{bd43ec0e25984fbda5a56d1d27189fb2,

title = "Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features",

abstract = "This paper reports the measurement results from a set of electrical, on-mask test structures based on industry standard test feature layouts normally used to investigate process proximity effects and improve optical proximity correction (OPC) models. The electrical test structures were fabricated on a binary photomask using the GHOST proximity correction technique to compensate for typical e-beam induced proximity errors. This is one of the first times that electrical test structures have been used to evaluate GHOST exposure. The test structures were measured electrically and optically with a dedicated photomask metrology tool and the results from the two techniques are presented.",

author = "Andreas Tsiamis and S. Smith and M. McCallum and Hourd, {A. C.} and O. Toublan and Tom Stevenson and Walton, {A. J.}",

year = "2008",

language = "English",

isbn = "978-1-4244-1800-8",

pages = "29--34",

booktitle = "2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS",

publisher = "Institute of Electrical and Electronics Engineers",

note = "IEEE International Conference on Microelectronic Test Structures ; Conference date: 24-03-2008 Through 27-03-2008",

}

Tsiamis, A , Smith, S, McCallum, M, Hourd, AC, Toublan, O, Stevenson, T & Walton, AJ 2008, Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features. in 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS. Institute of Electrical and Electronics Engineers, NEW YORK, pp. 29-34, IEEE International Conference on Microelectronic Test Structures, Edinburgh, 24/03/08.

Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features. / Tsiamis, Andreas ; Smith, S.; McCallum, M. et al.
2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS. NEW YORK: Institute of Electrical and Electronics Engineers, 2008. p. 29-34.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features

AU - Tsiamis, Andreas

AU - Smith, S.

AU - McCallum, M.

AU - Hourd, A. C.

AU - Toublan, O.

AU - Stevenson, Tom

AU - Walton, A. J.

PY - 2008

Y1 - 2008

N2 - This paper reports the measurement results from a set of electrical, on-mask test structures based on industry standard test feature layouts normally used to investigate process proximity effects and improve optical proximity correction (OPC) models. The electrical test structures were fabricated on a binary photomask using the GHOST proximity correction technique to compensate for typical e-beam induced proximity errors. This is one of the first times that electrical test structures have been used to evaluate GHOST exposure. The test structures were measured electrically and optically with a dedicated photomask metrology tool and the results from the two techniques are presented.

AB - This paper reports the measurement results from a set of electrical, on-mask test structures based on industry standard test feature layouts normally used to investigate process proximity effects and improve optical proximity correction (OPC) models. The electrical test structures were fabricated on a binary photomask using the GHOST proximity correction technique to compensate for typical e-beam induced proximity errors. This is one of the first times that electrical test structures have been used to evaluate GHOST exposure. The test structures were measured electrically and optically with a dedicated photomask metrology tool and the results from the two techniques are presented.

M3 - Conference contribution

SN - 978-1-4244-1800-8

SP - 29

EP - 34

BT - 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS

PB - Institute of Electrical and Electronics Engineers

CY - NEW YORK

T2 - IEEE International Conference on Microelectronic Test Structures

Y2 - 24 March 2008 through 27 March 2008

ER -

Tsiamis A , Smith S, McCallum M, Hourd AC, Toublan O, Stevenson T et al. Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features. In 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS. NEW YORK: Institute of Electrical and Electronics Engineers. 2008. p. 29-34

Investigation of electrical and optical CD measurement techniques for the characterisation of on-mask GHOST proximity corrected features

Abstract / Description of output

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IEEE International Conference on Microelectronic Test Structures

Cite this