Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

A. Al-Bayati; S. Tandon; Ruth Doherty; A. Murrell; D. Wagner; M. Foad; B. Adibi; R. Mickevicius; V. Meniailenko; S. Simeonov; A. Jain; D. Sing; C. Ferguson; R. Murto; L. Larson; H. Ryssel; L. Frey; J. Gyulai; H. Glawischnig

doi:10.1109/.2000.924097

Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

A. Al-Bayati, S. Tandon, Ruth Doherty, A. Murrell, D. Wagner, M. Foad, B. Adibi, R. Mickevicius, V. Meniailenko, S. Simeonov, A. Jain, D. Sing, C. Ferguson, R. Murto, L. Larson, H. Ryssel (Editor), L. Frey (Editor), J. Gyulai (Editor), H. Glawischnig (Editor)

School of Geosciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

Ultra shallow junctions <500 Å with steep profiles <8 nm/decade are required for device technologies ⩽0.13 μm as outlined by the recent ITRS Roadmap. For a p+/n junction such profiles can be obtained using sub-keV B ion implantation since both the projected range and more importantly the transient enhanced diffusion are significantly reduced at lower energies. State-of-the-art high current implanters utilize a deceleration mode typically for sub 1 keV implantation in order to increase the beam current and production wafer throughput. Such a mode contains a very low level of energy contamination. This level is measured for sub keV B implants in the Quantum Leap and factors affecting the level of contamination are studied. Spike and soak annealing reduces the effect of the energy contamination on junction profile and depth. The effect of energy contamination on device performance such as Leff, VT and I DSAT is simulated using ISE TCAD

Original language	English
Title of host publication	Conference on Ion Implantation Technology, 2000
Pages	87-90
Number of pages	4
DOIs	https://doi.org/10.1109/.2000.924097
Publication status	Published - Sept 2000

Keywords / Materials (for Non-textual outputs)

contamination
implants
instruments
ion beams
ion implantation
particle beam optics
production
silicon
systems engineering and theory
throughput

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10.1109/.2000.924097

00924097Final published version, 402 KB

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=924097

Cite this

Al-Bayati, A., Tandon, S., Doherty, R., Murrell, A., Wagner, D., Foad, M., Adibi, B., Mickevicius, R., Meniailenko, V., Simeonov, S., Jain, A., Sing, D., Ferguson, C., Murto, R., Larson, L., Ryssel, H. (Ed.), Frey, L. (Ed.), Gyulai, J. (Ed.), & Glawischnig, H. (Ed.) (2000). Junction profiles of sub keV ion implantation for deep sub-quarter micron devices. In Conference on Ion Implantation Technology, 2000 (pp. 87-90) https://doi.org/10.1109/.2000.924097

@inproceedings{129a2295d6df427f8fca1efb1db8e452,

title = "Junction profiles of sub keV ion implantation for deep sub-quarter micron devices",

abstract = "Ultra shallow junctions <500 {\AA} with steep profiles <8 nm/decade are required for device technologies ⩽0.13 μm as outlined by the recent ITRS Roadmap. For a p+/n junction such profiles can be obtained using sub-keV B ion implantation since both the projected range and more importantly the transient enhanced diffusion are significantly reduced at lower energies. State-of-the-art high current implanters utilize a deceleration mode typically for sub 1 keV implantation in order to increase the beam current and production wafer throughput. Such a mode contains a very low level of energy contamination. This level is measured for sub keV B implants in the Quantum Leap and factors affecting the level of contamination are studied. Spike and soak annealing reduces the effect of the energy contamination on junction profile and depth. The effect of energy contamination on device performance such as Leff, VT and I DSAT is simulated using ISE TCAD",

keywords = "contamination , implants , instruments, ion beams, ion implantation, particle beam optics, production, silicon, systems engineering and theory , throughput",

author = "A. Al-Bayati and S. Tandon and Ruth Doherty and A. Murrell and D. Wagner and M. Foad and B. Adibi and R. Mickevicius and V. Meniailenko and S. Simeonov and A. Jain and D. Sing and C. Ferguson and R. Murto and L. Larson and H. Ryssel and L. Frey and J. Gyulai and H. Glawischnig",

year = "2000",

month = sep,

doi = "10.1109/.2000.924097",

language = "English",

isbn = "0-7803-6462-7 ",

pages = "87--90",

booktitle = "Conference on Ion Implantation Technology, 2000",

}

Al-Bayati, A, Tandon, S, Doherty, R, Murrell, A, Wagner, D, Foad, M, Adibi, B, Mickevicius, R, Meniailenko, V, Simeonov, S, Jain, A, Sing, D, Ferguson, C, Murto, R, Larson, L, Ryssel, H (ed.), Frey, L (ed.), Gyulai, J (ed.) & Glawischnig, H (ed.) 2000, Junction profiles of sub keV ion implantation for deep sub-quarter micron devices. in Conference on Ion Implantation Technology, 2000. pp. 87-90. https://doi.org/10.1109/.2000.924097

TY - GEN

T1 - Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

AU - Al-Bayati, A.

AU - Tandon, S.

AU - Doherty, Ruth

AU - Murrell, A.

AU - Wagner, D.

AU - Foad, M.

AU - Adibi, B.

AU - Mickevicius, R.

AU - Meniailenko, V.

AU - Simeonov, S.

AU - Jain, A.

AU - Sing, D.

AU - Ferguson, C.

AU - Murto, R.

AU - Larson, L.

A2 - Ryssel, H.

A2 - Frey, L.

A2 - Gyulai, J.

A2 - Glawischnig, H.

PY - 2000/9

Y1 - 2000/9

N2 - Ultra shallow junctions <500 Å with steep profiles <8 nm/decade are required for device technologies ⩽0.13 μm as outlined by the recent ITRS Roadmap. For a p+/n junction such profiles can be obtained using sub-keV B ion implantation since both the projected range and more importantly the transient enhanced diffusion are significantly reduced at lower energies. State-of-the-art high current implanters utilize a deceleration mode typically for sub 1 keV implantation in order to increase the beam current and production wafer throughput. Such a mode contains a very low level of energy contamination. This level is measured for sub keV B implants in the Quantum Leap and factors affecting the level of contamination are studied. Spike and soak annealing reduces the effect of the energy contamination on junction profile and depth. The effect of energy contamination on device performance such as Leff, VT and I DSAT is simulated using ISE TCAD

AB - Ultra shallow junctions <500 Å with steep profiles <8 nm/decade are required for device technologies ⩽0.13 μm as outlined by the recent ITRS Roadmap. For a p+/n junction such profiles can be obtained using sub-keV B ion implantation since both the projected range and more importantly the transient enhanced diffusion are significantly reduced at lower energies. State-of-the-art high current implanters utilize a deceleration mode typically for sub 1 keV implantation in order to increase the beam current and production wafer throughput. Such a mode contains a very low level of energy contamination. This level is measured for sub keV B implants in the Quantum Leap and factors affecting the level of contamination are studied. Spike and soak annealing reduces the effect of the energy contamination on junction profile and depth. The effect of energy contamination on device performance such as Leff, VT and I DSAT is simulated using ISE TCAD

KW - contamination

KW - implants

KW - instruments

KW - ion beams

KW - ion implantation

KW - particle beam optics

KW - production

KW - silicon

KW - systems engineering and theory

KW - throughput

U2 - 10.1109/.2000.924097

DO - 10.1109/.2000.924097

M3 - Conference contribution

SN - 0-7803-6462-7

SP - 87

EP - 90

BT - Conference on Ion Implantation Technology, 2000

ER -

Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

Abstract / Description of output

Keywords / Materials (for Non-textual outputs)

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