Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction

S. Smith, Andreas Tsiamis, M. McCallum, A. C. Hourd, Tom Stevenson, Anthony Walton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.

Original languageEnglish
Title of host publication2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS
Place of PublicationNEW YORK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages24-29
Number of pages6
ISBN (Print)978-1-4244-6915-4
Publication statusPublished - 2010
Event23rd International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima
Duration: 22 Mar 201025 Mar 2010

Conference

Conference23rd International Conference on Microelectronic Test Structures (ICMTS)
CityHiroshima
Period22/03/1025/03/10

Keywords

  • LINEWIDTH

Fingerprint

Dive into the research topics of 'Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction'. Together they form a unique fingerprint.

Cite this