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Abstract
Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.
Original language | English |
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Title of host publication | 2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS |
Place of Publication | NEW YORK |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 24-29 |
Number of pages | 6 |
ISBN (Print) | 978-1-4244-6915-4 |
Publication status | Published - 2010 |
Event | 23rd International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima Duration: 22 Mar 2010 → 25 Mar 2010 |
Conference
Conference | 23rd International Conference on Microelectronic Test Structures (ICMTS) |
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City | Hiroshima |
Period | 22/03/10 → 25/03/10 |
Keywords / Materials (for Non-textual outputs)
- LINEWIDTH
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Dive into the research topics of 'Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction'. Together they form a unique fingerprint.Projects
- 1 Finished
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RCUK Fellowship
Smith, S. (Principal Investigator), Anderton, S. (Co-investigator), Bagnaninchi, P. (Co-investigator), Blythe, R. (Co-investigator), Calvert, J. (Co-investigator), Downes, A. (Co-investigator), Frame, M. (Co-investigator), Hay, D. (Co-investigator), Popovic, N. (Co-investigator) & Rambaut, A. (Co-investigator)
1/10/06 → 30/06/13
Project: Research