Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction

S. Smith; Andreas Tsiamis; M. McCallum; A. C. Hourd; Tom Stevenson; Anthony Walton

Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction

S. Smith, Andreas Tsiamis, M. McCallum, A. C. Hourd, Tom Stevenson, Anthony Walton

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.

Original language	English
Title of host publication	2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	24-29
Number of pages	6
ISBN (Print)	978-1-4244-6915-4
Publication status	Published - 2010
Event	23rd International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima Duration: 22 Mar 2010 → 25 Mar 2010

Conference

Conference	23rd International Conference on Microelectronic Test Structures (ICMTS)
City	Hiroshima
Period	22/03/10 → 25/03/10

Keywords

LINEWIDTH

1 Finished

RCUK Fellowship
Smith, S., Anderton, S., Bagnaninchi, P., Blythe, R., Calvert, J., Downes, A., Frame, M., Hay, D., Popovic, N. & Rambaut, A.
EPSRC, STFC
1/10/06 → 30/06/13
Project: Research

Cite this

Smith, S. ; Tsiamis, Andreas ; McCallum, M. ; Hourd, A. C. ; Stevenson, Tom ; Walton, Anthony. / Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction. 2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS. NEW YORK : Institute of Electrical and Electronics Engineers (IEEE), 2010. pp. 24-29

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title = "Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction",

abstract = "Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.",

keywords = "LINEWIDTH",

author = "S. Smith and Andreas Tsiamis and M. McCallum and Hourd, {A. C.} and Tom Stevenson and Anthony Walton",

year = "2010",

language = "English",

isbn = "978-1-4244-6915-4",

pages = "24--29",

booktitle = "2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "23rd International Conference on Microelectronic Test Structures (ICMTS) ; Conference date: 22-03-2010 Through 25-03-2010",

}

Smith, S , Tsiamis, A, McCallum, M, Hourd, AC, Stevenson, T & Walton, A 2010, Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction. in 2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS. Institute of Electrical and Electronics Engineers (IEEE), NEW YORK, pp. 24-29, 23rd International Conference on Microelectronic Test Structures (ICMTS), Hiroshima, 22/03/10.

Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction. / Smith, S.; Tsiamis, Andreas; McCallum, M.; Hourd, A. C.; Stevenson, Tom; Walton, Anthony.

2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS. NEW YORK : Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 24-29.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction

AU - Smith, S.

AU - Tsiamis, Andreas

AU - McCallum, M.

AU - Hourd, A. C.

AU - Stevenson, Tom

AU - Walton, Anthony

PY - 2010

Y1 - 2010

N2 - Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.

AB - Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.

KW - LINEWIDTH

M3 - Conference contribution

SN - 978-1-4244-6915-4

SP - 24

EP - 29

BT - 2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - NEW YORK

T2 - 23rd International Conference on Microelectronic Test Structures (ICMTS)

Y2 - 22 March 2010 through 25 March 2010

ER -

Kelvin Resistor Structures for the Investigation of Corner Serif Proximity Correction

Abstract

Conference

Keywords

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Projects

RCUK Fellowship

Cite this