Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors

Dong Ho Shin; Young Gyu You; Sung Il Jo; Goo Hwan Jeong; Eleanor E.B. Campbell; Hyun Jong Chung; Sung Ho Jhang

doi:10.3390/nano12213820

Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS₂ Barristors

Dong Ho Shin, Young Gyu You, Sung Il Jo, Goo Hwan Jeong, Eleanor E.B. Campbell, Hyun Jong Chung, Sung Ho Jhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

Original language	English
Article number	3820
Journal	Nanomaterials
Volume	12
Issue number	21
Early online date	29 Oct 2022
DOIs	https://doi.org/10.3390/nano12213820
Publication status	E-pub ahead of print - 29 Oct 2022

Keywords / Materials (for Non-textual outputs)

barristor
complementary inverter
graphene/carbon-nanotube junction
low power

Access to Document

10.3390/nano12213820

20221221_EEBCampbell_nanomaterials-12-03820-v2-VoRFinal published version, 820 KBLicence: Creative Commons: Attribution (CC-BY)

https://www.mdpi.com/2079-4991/12/21/3820

Cite this

@article{32d915d5b05349feb17c2749d0fc7818,

title = "Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors",

abstract = "The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.",

keywords = "barristor, complementary inverter, graphene/carbon-nanotube junction, low power",

author = "Shin, {Dong Ho} and You, {Young Gyu} and Jo, {Sung Il} and Jeong, {Goo Hwan} and Campbell, {Eleanor E.B.} and Chung, {Hyun Jong} and Jhang, {Sung Ho}",

note = "Funding Information: This work was supported by Konkuk University in 2017. Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

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AU - Shin, Dong Ho

AU - You, Young Gyu

AU - Jo, Sung Il

AU - Jeong, Goo Hwan

AU - Campbell, Eleanor E.B.

AU - Chung, Hyun Jong

AU - Jhang, Sung Ho

PY - 2022/10/29

Y1 - 2022/10/29

N2 - The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

AB - The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS (Formula presented.) barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

KW - barristor

KW - complementary inverter

KW - graphene/carbon-nanotube junction

KW - low power

U2 - 10.3390/nano12213820

DO - 10.3390/nano12213820

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