Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films

G. Cummins; H. Lin; Anthony Walton

Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films

G. Cummins, H. Lin, Anthony Walton

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper details the optimization and characterization of an anodic bonding process for glass to dielectric thin films. Test structures suitable for non destructive, in-situ measurement of the bond strength at the interface have been used to determine the uniformity and quality of the bond.

Original language	English
Title of host publication	2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers
Pages	111-116
Number of pages	6
ISBN (Print)	978-1-4244-1800-8
Publication status	Published - 2008
Event	IEEE International Conference on Microelectronic Test Structures - Edinburgh Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	IEEE International Conference on Microelectronic Test Structures
City	Edinburgh
Period	24/03/08 → 27/03/08

Keywords / Materials (for Non-textual outputs)

SILICON-NITRIDE
POLYSILICON
WAFERS
OXIDE

IEEE International Conference on Microelectronic Test Structures
Smith, S. (Chair)
24 Mar 2008 → 27 Mar 2008
Activity: Participating in or organising an event types › Participation in conference

Cite this

@inproceedings{16d64e19e4e1403b8b8b5b2a26d9146c,

title = "Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films",

abstract = "This paper details the optimization and characterization of an anodic bonding process for glass to dielectric thin films. Test structures suitable for non destructive, in-situ measurement of the bond strength at the interface have been used to determine the uniformity and quality of the bond.",

keywords = "SILICON-NITRIDE, POLYSILICON, WAFERS, OXIDE",

author = "G. Cummins and H. Lin and Anthony Walton",

year = "2008",

language = "English",

isbn = "978-1-4244-1800-8",

pages = "111--116",

booktitle = "2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "IEEE International Conference on Microelectronic Test Structures ; Conference date: 24-03-2008 Through 27-03-2008",

}

Cummins, G, Lin, H & Walton, A 2008, Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films. in 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS. Institute of Electrical and Electronics Engineers, NEW YORK, pp. 111-116, IEEE International Conference on Microelectronic Test Structures, Edinburgh, 24/03/08.

Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films. / Cummins, G.; Lin, H.; Walton, Anthony.
2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS. NEW YORK: Institute of Electrical and Electronics Engineers, 2008. p. 111-116.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films

AU - Cummins, G.

AU - Lin, H.

AU - Walton, Anthony

PY - 2008

Y1 - 2008

N2 - This paper details the optimization and characterization of an anodic bonding process for glass to dielectric thin films. Test structures suitable for non destructive, in-situ measurement of the bond strength at the interface have been used to determine the uniformity and quality of the bond.

AB - This paper details the optimization and characterization of an anodic bonding process for glass to dielectric thin films. Test structures suitable for non destructive, in-situ measurement of the bond strength at the interface have been used to determine the uniformity and quality of the bond.

KW - SILICON-NITRIDE

KW - POLYSILICON

KW - WAFERS

KW - OXIDE

M3 - Conference contribution

SN - 978-1-4244-1800-8

SP - 111

EP - 116

BT - 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS

PB - Institute of Electrical and Electronics Engineers

CY - NEW YORK

T2 - IEEE International Conference on Microelectronic Test Structures

Y2 - 24 March 2008 through 27 March 2008

ER -

Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films

Abstract

Conference

Keywords / Materials (for Non-textual outputs)

Fingerprint

Activities

IEEE International Conference on Microelectronic Test Structures

Cite this