Memory impedance in TiO2 based metal-insulator-metal Devices

Li Qingjiang, Ali Khiat, Iulia Salaoru, Christos Papavassiliou, Xu Hui, Themistoklis Prodromakis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO2-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects. We show how non-zero crossing current-voltage hysteresis loops can appear and we experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant.

Original languageEnglish
Article number4522
JournalScientific Reports
Volume4
DOIs
Publication statusPublished - 31 Mar 2014

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