Memristive devices as parameter setting elements in programmable gain amplifiers

R. Berdan*, T. Prodromakis, I. Salaoru, A. Khiat, C. Toumazou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low ROFF/RON switching ratios (∼10), are versatile and can be used reliably in programmable gain amplifiers.

Original languageEnglish
Article number243502
JournalApplied Physics Letters
Volume101
Issue number24
DOIs
Publication statusPublished - 10 Dec 2012

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