Memristive devices as parameter setting elements in programmable gain amplifiers

R. Berdan; T. Prodromakis; I. Salaoru; A. Khiat; C. Toumazou

doi:10.1063/1.4770315

Memristive devices as parameter setting elements in programmable gain amplifiers

R. Berdan^*, T. Prodromakis, I. Salaoru, A. Khiat, C. Toumazou

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO₂-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO₂ memristive devices, although possessing relatively low R_OFF/R_ON switching ratios (∼10), are versatile and can be used reliably in programmable gain amplifiers.

Original language	English
Article number	243502
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770315
Publication status	Published - 10 Dec 2012

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AU - Toumazou, C.

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Memristive devices as parameter setting elements in programmable gain amplifiers

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