Mix-dimensional ZnO/WSe2 piezo-gated transistor with active millinewton force-sensing

Yulin Geng; Jing Xu; Ammar Bin Che Mahzan; Peter Lomax; Muhammad Mubasher Saleem; Enrico Mastropaolo; Rebecca Cheung

doi:10.1021/acsami.2c15730

Mix-dimensional ZnO/WSe2 piezo-gated transistor with active millinewton force-sensing

Yulin Geng, Jing Xu, Ammar Bin Che Mahzan, Peter Lomax, Muhammad Mubasher Saleem, Enrico Mastropaolo, Rebecca Cheung

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe 2) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ I ds) on the WSe 2 channel. The different doping types of the WSe 2 channel have been found to lead to different directions of Δ I ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I ds change for ZnO NRs on the p-type doped WSe 2 device and an ∼-10% I ds change for the device with an n-type doped WSe 2. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.

Original language	English
Pages (from-to)	49026-49034
Journal	ACS Applied Materials & Interfaces
Volume	14
Issue number	43
Early online date	19 Oct 2022
DOIs	https://doi.org/10.1021/acsami.2c15730
Publication status	Published - 2 Nov 2022

Keywords / Materials (for Non-textual outputs)

2D materials
ZnO nanorods
force sensors
low dimensional materials
piezo-gated field-effect transistors
piezoelectric effect

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10.1021/acsami.2c15730Licence: Creative Commons: Attribution (CC-BY)

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@article{6436c349594248ea8f850d422236842d,

title = "Mix-dimensional ZnO/WSe2 piezo-gated transistor with active millinewton force-sensing",

abstract = "This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe 2) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ I ds) on the WSe 2 channel. The different doping types of the WSe 2 channel have been found to lead to different directions of Δ I ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I ds change for ZnO NRs on the p-type doped WSe 2 device and an ∼-10% I ds change for the device with an n-type doped WSe 2. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools. ",

keywords = "2D materials, ZnO nanorods, force sensors, low dimensional materials, piezo-gated field-effect transistors, piezoelectric effect",

author = "Yulin Geng and Jing Xu and {Bin Che Mahzan}, Ammar and Peter Lomax and Saleem, {Muhammad Mubasher} and Enrico Mastropaolo and Rebecca Cheung",

note = "Funding Information: The authors acknowledge the financial support of the U.K. Engineering and Physical Sciences Research Council (EPSRC) for this work. The China Scholarship Council (CSC) is acknowledged for financial support through the Ph.D. scholarship at the University of Edinburgh. The work was performed in the Scottish Microelectronics Centre and Institute for Integrated Micro and Nano Systems, University of Edinburgh. Publisher Copyright: {\textcopyright} 2022 The Authors. Published by American Chemical Society.",

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doi = "10.1021/acsami.2c15730",

language = "English",

volume = "14",

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T1 - Mix-dimensional ZnO/WSe2 piezo-gated transistor with active millinewton force-sensing

AU - Geng, Yulin

AU - Xu, Jing

AU - Bin Che Mahzan, Ammar

AU - Lomax, Peter

AU - Saleem, Muhammad Mubasher

AU - Mastropaolo, Enrico

AU - Cheung, Rebecca

N1 - Funding Information: The authors acknowledge the financial support of the U.K. Engineering and Physical Sciences Research Council (EPSRC) for this work. The China Scholarship Council (CSC) is acknowledged for financial support through the Ph.D. scholarship at the University of Edinburgh. The work was performed in the Scottish Microelectronics Centre and Institute for Integrated Micro and Nano Systems, University of Edinburgh. Publisher Copyright: © 2022 The Authors. Published by American Chemical Society.

PY - 2022/11/2

Y1 - 2022/11/2

N2 - This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe 2) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ I ds) on the WSe 2 channel. The different doping types of the WSe 2 channel have been found to lead to different directions of Δ I ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I ds change for ZnO NRs on the p-type doped WSe 2 device and an ∼-10% I ds change for the device with an n-type doped WSe 2. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.

AB - This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe 2) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ I ds) on the WSe 2 channel. The different doping types of the WSe 2 channel have been found to lead to different directions of Δ I ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I ds change for ZnO NRs on the p-type doped WSe 2 device and an ∼-10% I ds change for the device with an n-type doped WSe 2. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.

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KW - ZnO nanorods

KW - force sensors

KW - low dimensional materials

KW - piezo-gated field-effect transistors

KW - piezoelectric effect

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Mix-dimensional ZnO/WSe2 piezo-gated transistor with active millinewton force-sensing

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