Mix-dimensional ZnO/WSe2 piezo-gated transistor with active millinewton force-sensing

Yulin Geng, Jing Xu, Ammar Bin Che Mahzan, Peter Lomax, Muhammad Mubasher Saleem, Enrico Mastropaolo, Rebecca Cheung

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe 2) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ I ds) on the WSe 2 channel. The different doping types of the WSe 2 channel have been found to lead to different directions of Δ I ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I ds change for ZnO NRs on the p-type doped WSe 2 device and an ∼-10% I ds change for the device with an n-type doped WSe 2. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.

Original languageEnglish
Pages (from-to)49026-49034
JournalACS Applied Materials & Interfaces
Issue number43
Early online date19 Oct 2022
Publication statusPublished - 2 Nov 2022

Keywords / Materials (for Non-textual outputs)

  • 2D materials
  • ZnO nanorods
  • force sensors
  • low dimensional materials
  • piezo-gated field-effect transistors
  • piezoelectric effect


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