Noise characteristics with CMOS sensor array scaling

Claudio Accarino, Valerio F. Annese, Boon Chong Cheah, Mohammed A Al-Rawhani, Yash D. Shah, James Beeley, Srinjoy Mitra, Christos Giagkoulovitis, David R.S. Cumming

Research output: Contribution to journalArticlepeer-review

Abstract

An important consideration when scaling semiconductor sensor devices is the effect it may have on noise performance. Overall signal to noise ratio can be improved both by increasing sensor size, or alternatively by averaging the signal from two or more smaller sensors. In the design of sensor systems it is not immediately clear which is the best strategy to pursue. In this paper, we present a detailed theoretical and experimental study based on three different sensor arrays that show that an array of small independent sensors is always less noisy than a large sensor of the same size.
Original languageEnglish
Article number107325
Number of pages4
JournalMeasurement
Volume152
Early online date27 Nov 2019
DOIs
Publication statusPublished - 29 Feb 2020

Keywords

  • Semiconductor device noise
  • Noise measurement
  • CMOS
  • Ion-sensitive field effective transistor (ISFET)
  • Photodiode
  • Single Photon Avalanche Diode (SPAD)

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