On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

S. Perkins; A. Arvanitopoulos; K. N. Gyftakis; N. Lophitis

doi:10.1109/WiPDAAsia.2018.8734593

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

S. Perkins, A. Arvanitopoulos, K. N. Gyftakis, N. Lophitis

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.

Original language	English
Title of host publication	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Publisher	Institute of Electrical and Electronics Engineers
Pages	174-178
Number of pages	5
ISBN (Electronic)	9781538643921
DOIs	https://doi.org/10.1109/WiPDAAsia.2018.8734593
Publication status	Published - 13 Jun 2019
Event	1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China Duration: 16 May 2018 → 18 May 2018

Conference

Conference	1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Country/Territory	China
City	Xi'an
Period	16/05/18 → 18/05/18

Keywords / Materials (for Non-textual outputs)

B1505A
cascode GaN
E-mode
GaN HEMT
high temperature
power devices
static performance

Access to Document

10.1109/WiPDAAsia.2018.8734593

Cite this

Perkins, S., Arvanitopoulos, A., Gyftakis, K. N., & Lophitis, N. (2019). On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 (pp. 174-178). Article 8734593 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WiPDAAsia.2018.8734593

@inproceedings{2c883ed8c2514dad86e17536fce59f73,

title = "On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures",

abstract = "This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.",

keywords = "B1505A, cascode GaN, E-mode, GaN HEMT, high temperature, power devices, static performance",

author = "S. Perkins and A. Arvanitopoulos and Gyftakis, {K. N.} and N. Lophitis",

note = "Acceptance date set to exclude from REF OA Policy; 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 ; Conference date: 16-05-2018 Through 18-05-2018",

year = "2019",

month = jun,

day = "13",

doi = "10.1109/WiPDAAsia.2018.8734593",

language = "English",

pages = "174--178",

booktitle = "2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Perkins, S, Arvanitopoulos, A, Gyftakis, KN & Lophitis, N 2019, On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734593, Institute of Electrical and Electronics Engineers, pp. 174-178, 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Xi'an, China, 16/05/18. https://doi.org/10.1109/WiPDAAsia.2018.8734593

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. / Perkins, S.; Arvanitopoulos, A.; Gyftakis, K. N. et al.
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers, 2019. p. 174-178 8734593.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

AU - Perkins, S.

AU - Arvanitopoulos, A.

AU - Gyftakis, K. N.

AU - Lophitis, N.

N1 - Acceptance date set to exclude from REF OA Policy

PY - 2019/6/13

Y1 - 2019/6/13

N2 - This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.

AB - This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.

KW - B1505A

KW - cascode GaN

KW - E-mode

KW - GaN HEMT

KW - high temperature

KW - power devices

KW - static performance

UR - http://www.scopus.com/inward/record.url?scp=85068349866&partnerID=8YFLogxK

U2 - 10.1109/WiPDAAsia.2018.8734593

DO - 10.1109/WiPDAAsia.2018.8734593

M3 - Conference contribution

AN - SCOPUS:85068349866

SP - 174

EP - 178

BT - 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

PB - Institute of Electrical and Electronics Engineers

T2 - 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

Y2 - 16 May 2018 through 18 May 2018

ER -

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

Abstract

Conference

Keywords / Materials (for Non-textual outputs)

Access to Document

Other files and links

Fingerprint

Cite this