Piezo-electrically actuated and sensed silicon carbide ring resonators

E. Mastropaolo, B. Sviličić, T. Chen, B. Flynn, R. Cheung

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Flexural-mode silicon carbide (SiC) ring resonators with two top piezo-electric lead zirconium titanate (PZT) ports have been fabricated and tested. One port has been used as input actuator for driving the structures into resonance while the second port as output sensor for detecting the vibration and resonant frequency. The transmission frequency response has been measured showing that the devices fabricated with ring radius between 65 and 200 μm resonate in the frequency range 600 kHz-3.7 MHz. Finite element analysis has revealed that the stress in the SiC layer has a greater influence on the resonant frequency compared to the stress in the PZT. A tensile stress of ∼500 MPa within the SiC layer has been obtained from the comparison between measured and simulated frequency. The fabricated devices have been shown to possess a good linear behavior and power handling capacity in the operating power range 0-20 dBm.
Original languageEnglish
Pages (from-to)220-222
Number of pages3
JournalMicroelectronic Engineering
Volume97
DOIs
Publication statusPublished - Sept 2012

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