Practical demonstration of a RRAM memory fuse

Alexander Serb*, Ali Khiat, Themis Prodromakis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Since its inception, the resistive random access memory (RRAM) fuse has been a good example of how small numbers of RRAM devices can be combined to obtain useful behaviors unachievable by individual devices. In this work, we link the RRAM fuse concept with that of the complementary resistive switch (CRS), exploit that link to experimentally demonstrate a practical RRAM fuse using TiOx-based RRAM cells, and explain its basic operational principles. The fuse is stimulated by trains of identical pulses where successive pulse trains feature opposite polarities. In response, we observe a gradual (analogue) drop in resistive state followed by a gradual recovery phase regardless of input stimulus polarity, echoing traditional, binary CRS behavior. This analogue switching property opens the possibility of operating the RRAM fuse as a single-component step change detector. Moreover, we discover that the characteristics of the individual RRAM devices used to demonstrate the RRAM fuse concept in this work allow our fuse to be operated in a regime where one of the two constituent devices can be switched largely independently from the other. This property, not present in the traditional CRS, indicates that the inherently analogue RRAM fuse architecture may support additional operational flexibility through, for example, allowing finer control over its resistive state.

Original languageEnglish
Pages (from-to)2363-2372
Number of pages10
JournalInternational Journal of Circuit Theory and Applications
Issue number8
Early online date5 May 2021
Publication statusPublished - 11 Aug 2021

Keywords / Materials (for Non-textual outputs)

  • analogue memory
  • complementary resistive switch
  • memristor
  • RRAM
  • RRAM fuse


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