Practical operation considerations for memristive integrating sensors

I. Gupta*, A. Serb, A. Khiat, T. Prodromakis

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of key operating parameter on the practical operation of a recently proposed memristor-based neuronal activity sensor are investigated. A test memristor device is repeatedly subjected to a reference neural recording input signal that has been pre-processed using different settings. The resulting changes in the ability of the device to capture and store neuronal activity as resistive state transitions are assessed. It is found that resistive switching saturation is an important performance limiting factor, combatable by resetting the memristor. Higher desired sensitivity (ability to detect less prominent features in the neural waveform) necessitates more frequent resets.

Original languageEnglish
Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers
Pages2322-2325
Number of pages4
ISBN (Electronic)9781479953400
DOIs
Publication statusPublished - 11 Aug 2016
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: 22 May 201625 May 2016

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2016-July
ISSN (Print)0271-4310

Conference

Conference2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
Country/TerritoryCanada
CityMontreal
Period22/05/1625/05/16

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