Pressure-Induced Conductivity in a Neutral Nonplanar Spin-Localized Radical

Manuel Souto, HengBo Cui, Miriam Pena Alvarez, Valentin G Baonza, Harald O. Jeschke, Milan Tomic, Roser Valenti, Davide Blasi, Imma Ratera, Concepcio Rovira, Jaume Veciana

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

There is a growing interest in the development of single-component molecular conductors based on neutral organic radicals that are mainly formed by delocalized planar radicals, such as phenalenyl or thiazolyl radicals. However, there are no examples of systems based on non-planar and spin-localized C-centered radicals exhibiting electrical conductivity due to their Mott
insulator behavior with large Coulomb energy (U) repulsion and narrow electronic bandwidth (W). Here we present a new type of neutral radical conductor by linking a tetrathiafulvalene (TTF) unit to a neutral polychlorotriphenylmethyl radical (PTM) with the important feature that the TTF unit enhances the overlap between the radical units as a consequence of short intermolecular S···S interactions. This system becomes semiconducting upon the application of high pressure thanks to increased electronic bandwidth
and charge reorganization opening the way to develop a new family of neutral radical conductors.
Original languageEnglish
JournalJournal of the American Chemical Society
Early online date31 Aug 2016
Publication statusPublished - 14 Sept 2016


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