Pressure-induced symmetry breaking in tetrahedral networks

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Recent experiment and theoretical studies appear to show a great deal of complexity in the high-pressure behavior of tetrahedral semiconductors. We show that the structural stability of silicon and the order of its phase transitions is identical to that of a tetrahedrally coordinated network of rigid rods with spring-loaded joints. We further show how this parameter-free model resolves the recent controversy regarding the first high-pressure phase in silicon. © 1994 The American Physical Society.
Original languageEnglish
Pages (from-to)7389-7392
Number of pages4
JournalPhysical review B
Volume50
Issue number11
Publication statusPublished - 15 Sept 1994

Keywords / Materials (for Non-textual outputs)

  • STRUCTURAL PHASE-TRANSITIONS
  • COVALENT SYSTEMS
  • SILICON
  • MODEL
  • INSB
  • GPA
  • SI
  • GE

Fingerprint

Dive into the research topics of 'Pressure-induced symmetry breaking in tetrahedral networks'. Together they form a unique fingerprint.

Cite this