Pulse-induced resistive and capacitive switching in TiO2 thin film devices

Iulia Salaoru, Ali Khiat, Qingjiang Li, Radu Berdan, Themistoklis Prodromakis

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

In this study, we exploit the non-zero crossing current-voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate voltage pulsing. Our results prove that both resistive and capacitive switching arise naturally in nanoscale Pt/TiO2/Pt devices under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film.

Original languageEnglish
Article number233513
JournalApplied Physics Letters
Volume103
Issue number23
DOIs
Publication statusPublished - 5 Dec 2013

Fingerprint

Dive into the research topics of 'Pulse-induced resistive and capacitive switching in TiO2 thin film devices'. Together they form a unique fingerprint.

Cite this