Qualitative SPICE modeling accounting for volatile dynamics of TiO 2 memristors

R. Berdan, A. Khiat, C. Papavassiliou, T. Prodromakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract / Description of output

Accurate modeling of memristive devices is a critical condition that will allow the realization of large-scale memristor based circuits. The current methodology regarding modeling focuses on obtaining realistic pinched hysteresis curves, which are memristor signatures, but these do not hold useful information regarding device performance. We divert from this practice and propose a SPICE memristor model constructed based on qualitative verified assumptions of real memristive device operation. Our model introduces volatile effects that render a rate-dependent operation, and also accounts for both bipolar and unipolar switching. We demonstrate its plausibility via a wealth of simulation cases, which are qualitatively similar to several memristor dynamics reported in literature. Finally our model is benchmarked against measured results acquired by solid-state TiO2 memristors.

Original languageEnglish
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2033-2036
Number of pages4
ISBN (Print)9781479934324
DOIs
Publication statusPublished - 26 Jul 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: 1 Jun 20145 Jun 2014

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/TerritoryAustralia
CityMelbourne, VIC
Period1/06/145/06/14

Keywords / Materials (for Non-textual outputs)

  • memristive devices
  • memristor
  • model
  • non-volatile
  • SPICE
  • volatility

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