Quantitative wafer mapping of residual stress in electroplated NiFe films using independent strain and Young's modulus measurements

G. Schiavone, M. P. Y. Desmulliez, S. Smith, J. Murray, E. Sirotkin, J. G. Terry, A. R. Mount, A. J. WaIton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The uncontrolled development of stress within MEMS deposited and processed films can be detrimental for both device performance and reliability. This work focuses on combining the data from previously reported strain measurements obtained from mechanical test structures with new nano-indentation measurements of Young's modulus on both micromachined films and cantilevers. Both strain and Young's modulus data are then used to produce arguably the first quantitative wafer-level stress mapping of residual stress in micromachined materials. Results show significant local variation and possible correlation between Young's modulus and percentage of iron in the film. The measured values for the two test wafers, namely Young's modulus and residual stress, fall within the range of #x223C;30 to #x223C;180 GPa and #x223C;50 to #x223C;220 MPa, respectively. Young's modulus measurements on cantilevers show a consistent #x223C;20% difference with respect to traditional indentation measurements, suggesting that this setup may help reduce or remove the influence of the substrate.
Original languageEnglish
Title of host publicationIEEE International Conference on Microelectronic Test Structures
Place of PublicationNEW YORK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages105 -110
Number of pages6
ISBN (Print)978-1-4673-1028-4
DOIs
Publication statusPublished - 2012
EventIEEE International Conference on Microelectronic Test Structures (ICMTS) - San Diego
Duration: 20 Mar 201222 Mar 2012

Publication series

Name
ISSN (Print)1071-9032

Conference

ConferenceIEEE International Conference on Microelectronic Test Structures (ICMTS)
CitySan Diego
Period20/03/1222/03/12

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