Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2

Clifford W. Hicks, Alexandra S. Gibbs, Andrew P. Mackenzie, Hiroshi Takatsu, Yoshiteru Maeno, Edward A. Yelland

Research output: Contribution to journalArticlepeer-review

Abstract

We present de Haas–van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6  μΩ cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20  μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
Original languageEnglish
Article number116401
Number of pages5
JournalPhysical Review Letters
Volume109
Issue number11
DOIs
Publication statusPublished - 10 Sep 2012

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