Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2

Clifford W. Hicks; Alexandra S. Gibbs; Andrew P. Mackenzie; Hiroshi Takatsu; Yoshiteru Maeno; Edward A. Yelland

doi:10.1103/PhysRevLett.109.116401

Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO₂

Clifford W. Hicks, Alexandra S. Gibbs, Andrew P. Mackenzie, Hiroshi Takatsu, Yoshiteru Maeno, Edward A. Yelland

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We present de Haas–van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩ cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

Original language	English
Article number	116401
Number of pages	5
Journal	Physical Review Letters
Volume	109
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.109.116401
Publication status	Published - 10 Sept 2012

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10.1103/PhysRevLett.109.116401

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title = "Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2",

abstract = "We present de Haas–van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩ cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.",

author = "Hicks, {Clifford W.} and Gibbs, {Alexandra S.} and Mackenzie, {Andrew P.} and Hiroshi Takatsu and Yoshiteru Maeno and Yelland, {Edward A.}",

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doi = "10.1103/PhysRevLett.109.116401",

language = "English",

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T1 - Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2

AU - Hicks, Clifford W.

AU - Gibbs, Alexandra S.

AU - Mackenzie, Andrew P.

AU - Takatsu, Hiroshi

AU - Maeno, Yoshiteru

AU - Yelland, Edward A.

PY - 2012/9/10

Y1 - 2012/9/10

N2 - We present de Haas–van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩ cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

AB - We present de Haas–van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩ cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

U2 - 10.1103/PhysRevLett.109.116401

DO - 10.1103/PhysRevLett.109.116401

M3 - Article

SN - 0031-9007

VL - 109

JO - Physical Review Letters

JF - Physical Review Letters

IS - 11

M1 - 116401

ER -

Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2

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Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO₂