Reactive ion etch-induced effects on 0.2 micron T-gate $ In sub 0.52 Al sub 0.48 As/In sub 0.53 Ga sub 0.47 As/InP $ HEMTs

Rebecca Cheung, W. Patrick, I. Pfund, G. Haehner

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	3679-3683
Number of pages	5
Journal	Journal of Vacuum Science and Technology B
Volume	B14
Publication status	Published - 1996

Cite this

@article{675fcce7ffca4ab3a032528a1a27b0e1,

title = "Reactive ion etch-induced effects on 0.2 micron T-gate $ In sub 0.52 Al sub 0.48 As/In sub 0.53 Ga sub 0.47 As/InP $ HEMTs",

author = "Rebecca Cheung and W. Patrick and I. Pfund and G. Haehner",

year = "1996",

language = "Undefined/Unknown",

volume = "B14",

pages = "3679--3683",

journal = "Journal of Vacuum Science and Technology B",

issn = "1520-8567",

publisher = "A V S AMER INST PHYSICS",

}

TY - JOUR

T1 - Reactive ion etch-induced effects on 0.2 micron T-gate $ In sub 0.52 Al sub 0.48 As/In sub 0.53 Ga sub 0.47 As/InP $ HEMTs

AU - Cheung, Rebecca

AU - Patrick, W.

AU - Pfund, I.

AU - Haehner, G.

PY - 1996

Y1 - 1996

M3 - Article

SN - 1520-8567

SN - 2166-2754

VL - B14

SP - 3679

EP - 3683

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

ER -