Reactive ion etch-induced effects on the near-band-edge luminescence in GaN

Rebecca Cheung, R. J. Reeves, S. A. Brown, S. Withanage, I. Ben-Yaacov, M. Kamp

Research output: Contribution to journalArticlepeer-review

Original languageUndefined/Unknown
Pages (from-to)3185-3187
Number of pages3
JournalApplied Physics Letters
Volume74
Publication statusPublished - 1999

Cite this