Reactive ion etching mechanism study on $ Si/Ge sub x Si sub 1-x $

E. van der Drift, T. Zijlstra, Rebecca Cheung, K. Werner, S. Radelaar

Research output: Contribution to journalArticlepeer-review

Original languageUndefined/Unknown
Pages (from-to)343-348
Number of pages6
JournalMicroelectronic Engineering
Volume23
Publication statusPublished - 1994

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