Original language | Undefined/Unknown |
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Pages (from-to) | 343-348 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 23 |
Publication status | Published - 1994 |
Reactive ion etching mechanism study on $ Si/Ge sub x Si sub 1-x $
E. van der Drift, T. Zijlstra, Rebecca Cheung, K. Werner, S. Radelaar
Research output: Contribution to journal › Article › peer-review