Reactive ion etching mechanism study on $ Si/Ge sub x Si sub 1-x $

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	343-348
Number of pages	6
Journal	Microelectronic Engineering
Volume	23
Publication status	Published - 1994

Cite this

@article{2516f0f5fc824233933a5e528a1808ad,

title = "Reactive ion etching mechanism study on \$ Si/Ge sub x Si sub 1-x \$",

author = "Drift, \{E. van der\} and T. Zijlstra and Rebecca Cheung and K. Werner and S. Radelaar",

year = "1994",

language = "Undefined/Unknown",

volume = "23",

pages = "343--348",

journal = "Microelectronic Engineering",

publisher = "Elsevier",

}