Reactive ion etching of GaAs using a mixture of methane and hydrogen

Rebecca Cheung, S. Thoms, S. P. Beaumont, G. Doughty, V. Law, C. D. W. Wilkinson

Research output: Contribution to journal › Article › peer-review

Cite this

@article{0b7ab1f2303841be84aafdcbc636ff03,

title = "Reactive ion etching of GaAs using a mixture of methane and hydrogen",

author = "Rebecca Cheung and S. Thoms and Beaumont, {S. P.} and G. Doughty and V. Law and Wilkinson, {C. D. W.}",

year = "1987",

language = "Undefined/Unknown",

volume = "23",

pages = "857--859",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

}