| Original language | Undefined/Unknown |
|---|---|
| Pages (from-to) | 857-859 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 23 |
| Publication status | Published - 1987 |
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Reactive ion etching of GaAs using a mixture of methane and hydrogen
- Rebecca Cheung
- , S. Thoms
- , S. P. Beaumont
- , G. Doughty
- , V. Law
- , C. D. W. Wilkinson
Research output: Contribution to journal › Article › peer-review