Resistive switching characteristics of indium-tin-oxide thin film devices

Ali Khiat*, Iulia Salaoru, Themistoklis Prodromakis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

We demonstrate that indium tin oxide (ITO), when used as an active core material in metal-insulator-metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to demonstrate transparent devices. Furthermore, we investigated the influence of active core thickness on the devices' characteristics, showing that their switching threshold scales with the ITO thickness. Unipolar switching was observed for devices comprising thick ITO films while bipolar switching occurred for both thin and thick ITO films at the absence of high voltage forming steps. Our study demonstrates that ITO holds good potential for resistive memory applications.

Original languageEnglish
Pages (from-to)1194-1199
Number of pages6
Journalphysica status solidi (a) – applications and materials science
Volume211
Issue number5
DOIs
Publication statusPublished - 6 Mar 2014

Keywords / Materials (for Non-textual outputs)

  • ITO active layer
  • memristor
  • ReRAM devices
  • resistive switching

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