Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

Ali Khiat; Simone Cortese; Alexander Serb; Themis Prodromakis

doi:10.5258/soton/397944

Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

Ali Khiat, Simone Cortese, Alexander Serb, Themis Prodromakis

School of Engineering

Research output: Other contribution

Abstract

Pt/TiOx/Pt resistive switching (RS) devices are considered to be amongst the best candidates for post-flash non-volatile memory (NVM) and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible resistive random access memory (RRAM) technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiOx/Pt stack onto flexible Parylene-C substrates. The devices were electrically characterized, exhibiting both digital and analog memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in implantable sensors and bio-compatible neural interfaces. Data for the paper by of the same name published in Nanotechnology, Volume 28, Number 2 doi:10.1088/1361-6528/28/2/025303

Original language	Undefined/Unknown
Type	dataset
Media of output	xls
Publisher	University of Southampton
DOIs	https://doi.org/10.5258/soton/397944
Publication status	Published - 24 Jan 2017

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10.5258/soton/397944Licence: Creative Commons: Attribution (CC-BY)

Cite this

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title = "Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates",

abstract = "Pt/TiOx/Pt resistive switching (RS) devices are considered to be amongst the best candidates for post-flash non-volatile memory (NVM) and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible resistive random access memory (RRAM) technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiOx/Pt stack onto flexible Parylene-C substrates. The devices were electrically characterized, exhibiting both digital and analog memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in implantable sensors and bio-compatible neural interfaces. Data for the paper by of the same name published in Nanotechnology, Volume 28, Number 2 doi:10.1088/1361-6528/28/2/025303",

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doi = "10.5258/soton/397944",

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T1 - Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

AU - Khiat, Ali

AU - Cortese, Simone

AU - Serb, Alexander

AU - Prodromakis, Themis

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N2 - Pt/TiOx/Pt resistive switching (RS) devices are considered to be amongst the best candidates for post-flash non-volatile memory (NVM) and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible resistive random access memory (RRAM) technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiOx/Pt stack onto flexible Parylene-C substrates. The devices were electrically characterized, exhibiting both digital and analog memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in implantable sensors and bio-compatible neural interfaces. Data for the paper by of the same name published in Nanotechnology, Volume 28, Number 2 doi:10.1088/1361-6528/28/2/025303

AB - Pt/TiOx/Pt resistive switching (RS) devices are considered to be amongst the best candidates for post-flash non-volatile memory (NVM) and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible resistive random access memory (RRAM) technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiOx/Pt stack onto flexible Parylene-C substrates. The devices were electrically characterized, exhibiting both digital and analog memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in implantable sensors and bio-compatible neural interfaces. Data for the paper by of the same name published in Nanotechnology, Volume 28, Number 2 doi:10.1088/1361-6528/28/2/025303

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