Original language | English |
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Pages (from-to) | 625-628 |
Number of pages | 4 |
Journal | Iit2002: ion implantation technology, proceedings |
Publication status | Published - 2003 |
SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon
Y. P. Li, J. Shyue, J. Hunter, B. McComb, M. Chun, Ruth Doherty, A. Foad, B. Brown (Editor), T. L. Alford (Editor), M. Nastasi (Editor), M. C. Vella (Editor)
Research output: Contribution to journal › Article › peer-review