SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon

Y. P. Li; J. Shyue; J. Hunter; B. McComb; M. Chun; Ruth Doherty; A. Foad; B. Brown; T. L. Alford; M. Nastasi; M. C. Vella

SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon

Y. P. Li
, J. Shyue
, J. Hunter
, B. McComb
, M. Chun
, Ruth Doherty
, A. Foad
, B. Brown (Editor)
, T. L. Alford (Editor)
, M. Nastasi (Editor)
, M. C. Vella (Editor)

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	625-628
Number of pages	4
Journal	Iit2002: ion implantation technology, proceedings
Publication status	Published - 2003

Cite this

@article{86729fd7ead644d899a003083b2fc14f,

title = "SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon",

author = "Li, \{Y. P.\} and J. Shyue and J. Hunter and B. McComb and M. Chun and Ruth Doherty and A. Foad and B. Brown and Alford, \{T. L.\} and M. Nastasi and Vella, \{M. C.\}",

year = "2003",

language = "English",

pages = "625--628",

journal = "Iit2002: ion implantation technology, proceedings",

}

TY - JOUR

T1 - SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon

AU - Li, Y. P.

AU - Shyue, J.

AU - Hunter, J.

AU - McComb, B.

AU - Chun, M.

AU - Doherty, Ruth

AU - Foad, A.

A2 - Brown, B.

A2 - Alford, T. L.

A2 - Nastasi, M.

A2 - Vella, M. C.

PY - 2003

Y1 - 2003

M3 - Article

SP - 625

EP - 628

JO - Iit2002: ion implantation technology, proceedings

JF - Iit2002: ion implantation technology, proceedings

ER -