Simulation and modeling of novel electronic device architectures with ness (Nano-electronic simulation software): A modular nano tcad simulation framework

Cristina Medina-Bailon*, Tapas Dutta, Ali Rezaei, Daniel Nagy, Fikru Adamu-Lema, Vihar P. Georgiev*, Asen Asenov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contem-porary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

Original languageEnglish
Article number680
Pages (from-to)1-21
JournalMicromachines
Volume12
Issue number6
DOIs
Publication statusPublished - 10 Jun 2021

Keywords / Materials (for Non-textual outputs)

  • Drift-diffusion
  • Integrated simulation environment
  • Kubo-Greenwood
  • Nanowire transistors (NWT)
  • Negative Capacitance FETs (NCFET)
  • Non-equilibrium Green’s function
  • Quantum correction
  • Resonant tunneling diodes (RTD)
  • Tunnel FETs (TFET)

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