Single crystal growth of YbRh2Si2 using Zn flux

Rongwei Hu*, J. Hudis, C. Stock, C. L. Broholm, C. Petrovic

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Large single crystals of YbRh2Si2 have been successfully grown from a high-temperature solution technique, using Zn flux and followed by a decanting process. As opposed from the crystals growth from In flux, the crystals are flux-free and larger on average, suitable for neutron scattering experiments. Characterization of basic physical properties and comparison with crystals grown using In flux were performed. (C) 2007 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalJOURNAL OF CRYSTAL GROWTH
Volume304
Issue number1
DOIs
Publication statusPublished - 1 Jun 2007

Keywords

  • growth from high-temperature solutions
  • single crystal
  • YbRh2Si2
  • QUANTUM CRITICAL-POINT

Fingerprint

Dive into the research topics of 'Single crystal growth of YbRh2Si2 using Zn flux'. Together they form a unique fingerprint.

Cite this