Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

Miriam Pena Alvarez; Elena del Corro; Angel Morales-Garcia; Ladislav Kavan; Martin Kalbac; Otakar Frank

doi:10.1021/acs.nanolett.5b00229

Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

Miriam Pena Alvarez, Elena del Corro, Angel Morales-Garcia, Ladislav Kavan, Martin Kalbac, Otakar Frank

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS₂. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.

Original language	English
Pages (from-to)	3139-3146
Number of pages	8
Journal	Nano Letters
Volume	15
Issue number	5
Early online date	30 Apr 2015
DOIs	https://doi.org/10.1021/acs.nanolett.5b00229
Publication status	Published - 13 May 2015

Keywords

Molybdenum disulfide
band gap engineering
out-of-plane compression
anvil cell
electronic properties calculations
Raman spectroscopy

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10.1021/acs.nanolett.5b00229

https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00229

Miriam Pena Alvarez
- School of Physics and Astronomy - Future Leaders Fellow
Person: Academic: Research Active

Cite this

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title = "Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering",

abstract = "Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS₂. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.",

keywords = "Molybdenum disulfide, band gap engineering, out-of-plane compression, anvil cell, electronic properties calculations, Raman spectroscopy",

author = "{Pena Alvarez}, Miriam and Corro, {Elena del} and Angel Morales-Garcia and Ladislav Kavan and Martin Kalbac and Otakar Frank",

year = "2015",

month = may,

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doi = "10.1021/acs.nanolett.5b00229",

language = "English",

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journal = "Nano Letters",

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TY - JOUR

T1 - Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

AU - Pena Alvarez, Miriam

AU - Corro, Elena del

AU - Morales-Garcia, Angel

AU - Kavan, Ladislav

AU - Kalbac, Martin

AU - Frank, Otakar

PY - 2015/5/13

Y1 - 2015/5/13

N2 - Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS₂. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.

AB - Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS₂. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.

KW - Molybdenum disulfide

KW - band gap engineering

KW - out-of-plane compression

KW - anvil cell

KW - electronic properties calculations

KW - Raman spectroscopy

U2 - 10.1021/acs.nanolett.5b00229

DO - 10.1021/acs.nanolett.5b00229

M3 - Article

VL - 15

SP - 3139

EP - 3146

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 5

ER -

Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

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Keywords

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Miriam Pena Alvarez

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