Abstract
Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS₂. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.
Original language | English |
---|---|
Pages (from-to) | 3139-3146 |
Number of pages | 8 |
Journal | Nano Letters |
Volume | 15 |
Issue number | 5 |
Early online date | 30 Apr 2015 |
DOIs | |
Publication status | Published - 13 May 2015 |
Keywords
- Molybdenum disulfide
- band gap engineering
- out-of-plane compression
- anvil cell
- electronic properties calculations
- Raman spectroscopy
Fingerprint
Dive into the research topics of 'Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering'. Together they form a unique fingerprint.Profiles
-
Miriam Pena Alvarez
- School of Physics and Astronomy - Future Leaders Fellow
Person: Academic: Research Active