Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

Miriam Pena Alvarez, Elena del Corro, Angel Morales-Garcia, Ladislav Kavan, Martin Kalbac, Otakar Frank

Research output: Contribution to journalArticlepeer-review

Abstract

Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS₂. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.
Original languageEnglish
Pages (from-to)3139-3146
Number of pages8
JournalNano Letters
Volume15
Issue number5
Early online date30 Apr 2015
DOIs
Publication statusPublished - 13 May 2015

Keywords

  • Molybdenum disulfide
  • band gap engineering
  • out-of-plane compression
  • anvil cell
  • electronic properties calculations
  • Raman spectroscopy

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