Single photon detector and associated methods for making the same

Robert Henderson (Inventor), L. A. Grant (Inventor), M. Gersbach (Inventor), Edoardo Charbon (Inventor), C. Niclass (Inventor)

Research output: Patent

Abstract / Description of output

A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
Original languageEnglish
Patent numberUS7898001
Filing date3/12/08
Publication statusPublished - 11 Mar 2011


Dive into the research topics of 'Single photon detector and associated methods for making the same'. Together they form a unique fingerprint.

Cite this