Single photon detector and associated methods for making the same

Robert Henderson; L. A. Grant; M. Gersbach; Edoardo Charbon; C. Niclass

Single photon detector and associated methods for making the same

Robert Henderson (Inventor), L. A. Grant (Inventor), M. Gersbach (Inventor), Edoardo Charbon (Inventor), C. Niclass (Inventor)

School of Engineering

Research output: Patent

Abstract / Description of output

A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.

Original language	English
Patent number	US7898001
IPC	H01L31/00
Filing date	3/12/08
Publication status	Published - 11 Mar 2011

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title = "Single photon detector and associated methods for making the same",

abstract = "A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.",

author = "Robert Henderson and Grant, {L. A.} and M. Gersbach and Edoardo Charbon and C. Niclass",

year = "2011",

month = mar,

day = "11",

language = "English",

publisher = "United States Patent and Trademark Office",

type = "Patent",

note = "US7898001; H01L31/00",

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TY - PAT

T1 - Single photon detector and associated methods for making the same

AU - Henderson, Robert

AU - Grant, L. A.

AU - Gersbach, M.

AU - Charbon, Edoardo

AU - Niclass, C.

PY - 2011/3/11

Y1 - 2011/3/11

N2 - A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.

AB - A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.

UR - https://infoscience.epfl.ch/record/229023?ln=en

M3 - Patent

M1 - US7898001

Y2 - 2008/12/03

PB - United States Patent and Trademark Office

ER -

Single photon detector and associated methods for making the same

Abstract / Description of output

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