Size effect on efficiency droop of blue light emitting diode

Y. B. Tao, S. Y. Wang*, Z. Z. Chen, Z. Gong, E. Y. Xie, Y. J. Chen, Y. F. Zhang, J. Mckendry, D. Massoubre, E. D. Gu, B. R. Rae, R. K. Henderson, G. Y. Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

In this paper, the size effects on the efficiency droop (ED) in blue InGaN/GaN quantum well light emitting diode are investigated. The smaller size LEDs can work well under much higher power density, especially when the size is reduced to under 40 micro-meters. It shows a weaker ED in these small LEDs. Time correlated single photon counting (TCSPC) measurements show a longer electroluminescence lifetime for smaller size LEDs, which implicates the nonradiative recombination is reduced. It is likely due to Aguer recombination reduction by quantum well (QW) band flatened with the device size decreasing. Cathodoluminescence results indicates that the strain in QWs is relaxed both in the whole pillar and along radial direction of the pillar. The better performance of the smaller size LED is likely attributed to strain relaxation.

Original languageEnglish
Pages (from-to)616-619
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3-4
Publication statusPublished - 1 Mar 2012

Keywords / Materials (for Non-textual outputs)

  • Efficiency droop
  • GaN
  • LED
  • Size effect


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