Stochastic switching of TiO2-based memristive devices with identical initial memory states

Qingjiang Li, Ali Khiat, Iulia Salaoru, Hui Xu, Themistoklis Prodromakis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution.

Original languageEnglish
Article number293
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
Publication statusPublished - 10 Jun 2014

Keywords / Materials (for Non-textual outputs)

  • Filamentary distribution
  • Initial state
  • Resistive switching

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