Study of dislocation nucleation mechanism in nanoindentation process

Y. C. Liang, Q. L. Wang, N. Yu, J. X. Chen*, F. S. Zha, Y. Z. Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Molecular dynamics simulations method is used to simulate nano-indentation process of single crystal copper. The improved centro symmetry parameters (ICSP) and radial distribution function (RDF) method are used to analyze the dislocation nucleation mechanism and defects evolution mechanism of workpiece during nano-indentation process. The simulation results show that: during nano-indentation process, the dislocation nucleate and launch near the stacking atoms at the interface between the indenter and workpiece, expand along the slip plane and terminated on the profile-surface of the workpiece. In the sub-surface of the workpiece, there are stacking atoms, partial dislocation and stacking fault, and we found that the formation of partial dislocations halfloops. To our interested that we find a "V" shape dislocation loop in the simulation and study its formation mechanism. In addition, we also study impact of the indentation depths on the dislocation nucleation mechanism and the atomic spatial order degree.

Original languageEnglish
Pages (from-to)536-541
Number of pages6
JournalNanoscience and Nanotechnology Letters
Volume5
Issue number5
DOIs
Publication statusPublished - 1 May 2013

Keywords / Materials (for Non-textual outputs)

  • Centro-Symmetry Parameters
  • Dislocation Nucleation Mechanism
  • Nanoindentation
  • Sub-Surface

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