Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays

B. Guilhabert, D. Massoubre, E Richardson, J. McKendry, G. Valentine, Robert Henderson, Ian Watson, E. Gu, M. D. Dawson

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

The fabrication of gallium-nitride based (GaN) lightemitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOSdriven ultraviolet GaN-based micro-LED arrays were used to pattern photoresist layers with feature sizes as small as 500nm. Chequerboard-type square LED array devices were then fabricated using such photoresist patterns based on either single pixel or multi-pixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays comprised of either 450nm-emitting 199x199ìm2 pixels on a 200ìm pitch or 520nm-emitting 21x18ìm2 pixels on a 23ìm pitch. Fill-factors of 99% and 71.5% were achieved with optical output power densities per pixel of 5W/cm2 and 20W/cm2 at 90mA and 6mA dc injected currents, respectively.
Original languageEnglish
Pages (from-to)2221-2224
Number of pages4
JournalIEEE Photonics Technology Letters
Volume24
Issue number24
Early online date24 Oct 2012
DOIs
Publication statusPublished - 15 Dec 2012

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