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Abstract
The fabrication of gallium-nitride based (GaN) lightemitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOSdriven ultraviolet GaN-based micro-LED arrays were used to pattern photoresist layers with feature sizes as small as 500nm. Chequerboard-type square LED array devices were then fabricated using such photoresist patterns based on either single pixel or multi-pixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays comprised of either 450nm-emitting 199x199ìm2 pixels on a 200ìm pitch or 520nm-emitting 21x18ìm2 pixels on a 23ìm pitch. Fill-factors of 99% and 71.5% were achieved with optical output power densities per pixel of 5W/cm2 and 20W/cm2 at 90mA and 6mA dc injected currents, respectively.
Original language | English |
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Pages (from-to) | 2221-2224 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 24 |
Issue number | 24 |
Early online date | 24 Oct 2012 |
DOIs | |
Publication status | Published - 15 Dec 2012 |
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Dive into the research topics of 'Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays'. Together they form a unique fingerprint.Projects
- 1 Finished
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HYPIX: Hybrid Organic Semiconductor /gallium nitride/CMOS smart pixel arrays
Henderson, R., Renshaw, D., Underwood, I. & Walton, A.
1/10/08 → 30/09/12
Project: Research