Abstract
Surface texturing techniques that are applied in laminar structures to extend the supported Maxwell-Wagner polarisation are described. The roughness of the semiconductor surface is increased, resulting in a subdivision of the large Si-SiO2 interfaces to a multitude of small interfaces. Measured results demonstrate that this surface texturing has a direct effect on the relaxation of the Maxwell-Wagner polarisation and, in particular, at the interfacial to atomic polarisation transition.
Original language | English |
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Pages (from-to) | 5-8 |
Number of pages | 4 |
Journal | Micro and Nano Letters |
Volume | 4 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Mar 2009 |