Switching mechanisms in microscale memristors

T. Prodromakis*, K. Michelakis, C. Toumazou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical ROFF/RON ratios.

Original languageEnglish
Pages (from-to)63-65
Number of pages3
JournalElectronics Letters
Issue number1
Publication statusPublished - 7 Jan 2010


Dive into the research topics of 'Switching mechanisms in microscale memristors'. Together they form a unique fingerprint.

Cite this