Switching mechanisms in microscale memristors

T. Prodromakis; K. Michelakis; C. Toumazou

doi:10.1049/el.2010.2716

Switching mechanisms in microscale memristors

T. Prodromakis^*, K. Michelakis, C. Toumazou

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical R_OFF/R_ON ratios.

Original language	English
Pages (from-to)	63-65
Number of pages	3
Journal	Electronics Letters
Volume	46
Issue number	1
DOIs	https://doi.org/10.1049/el.2010.2716
Publication status	Published - 7 Jan 2010

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10.1049/el.2010.2716

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abstract = "It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical ROFF/RON ratios.",

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Switching mechanisms in microscale memristors

Abstract

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