TY - GEN
T1 - TCAD Simulation of Novel Semiconductor Devices
AU - Dutta, Tapas
AU - Medina-Bailon, Cristina
AU - Rezaei, Ali
AU - Nagy, Daniel
AU - Adamu-Lema, Fikru
AU - Xeni, Nikolas
AU - Abourrig, Yassine
AU - Kumar, Naveen
AU - Georgiev, Vihar P.
AU - Asenov, Asen
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/12/1
Y1 - 2021/12/1
N2 - Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further, the ability of the tools to incorporate different modeling paradigms and to be applicable to a wide range of device architectures and operating conditions is essential. In this paper, we provide an overview of the new device simulator NESS (Nano-Electronic Software Simulator) developed at the University of Glasgow's Device Modelling Group. It is a fast and modular TCAD tool with flexible architecture and structure generation capabilities, and contains different modules including classical, semi-classical, and quantum transport solvers, mobility calculation, kinetic Monte-Carlo and others. NESS can also take into account various sources of statistical variability in nanodevices and can perform simulations of thousands of microscopically different devices created by the structure generator. This state-of-the-art tool is designed to be open source and is being made available to the device engineering community at large for active collaboration and development.
AB - Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further, the ability of the tools to incorporate different modeling paradigms and to be applicable to a wide range of device architectures and operating conditions is essential. In this paper, we provide an overview of the new device simulator NESS (Nano-Electronic Software Simulator) developed at the University of Glasgow's Device Modelling Group. It is a fast and modular TCAD tool with flexible architecture and structure generation capabilities, and contains different modules including classical, semi-classical, and quantum transport solvers, mobility calculation, kinetic Monte-Carlo and others. NESS can also take into account various sources of statistical variability in nanodevices and can perform simulations of thousands of microscopically different devices created by the structure generator. This state-of-the-art tool is designed to be open source and is being made available to the device engineering community at large for active collaboration and development.
KW - Drift-Diffusion
KW - Kinetic Monte-Carlo
KW - Kubo-Greenwood
KW - Non-Equilibrium Green's Function
KW - Quantum Correction
KW - TCAD
KW - Variability
UR - http://www.scopus.com/inward/record.url?scp=85122872442&partnerID=8YFLogxK
UR - https://eprints.gla.ac.uk/258912/
U2 - 10.1109/ASICON52560.2021.9620465
DO - 10.1109/ASICON52560.2021.9620465
M3 - Conference contribution
AN - SCOPUS:85122872442
T3 - Proceedings of International Conference on ASIC
SP - 1
EP - 4
BT - 2021 IEEE 14th International Conference on ASIC (ASICON)
PB - Institute of Electrical and Electronics Engineers
T2 - 14th IEEE International Conference on ASIC, ASICON 2021
Y2 - 26 October 2021 through 29 October 2021
ER -