Temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements

A M  Andriesh; I P  Culeac; P J S  Ewen; A E  Owen

Temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements

A M Andriesh, I P Culeac, P J S Ewen, A E Owen

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The time-averaged hole drift mobility in As2S3 glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. Tile hole mobility was found to be thermally activated at high temperatures, of the order of 10(-10) cm(2) /V sec at 300 K, and almost temperature independent below similar to 130 K.

Original language	English
Title of host publication	CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers
Pages	45-48
Number of pages	4
ISBN (Print)	0-7803-3804-9
Publication status	Published - 1997
Event	1997 International Semiconductor Conference (CAS 97) - SINAIA Duration: 7 Oct 1997 → 11 Oct 1997

Conference

Conference	1997 International Semiconductor Conference (CAS 97)
City	SINAIA
Period	7/10/97 → 11/10/97

Cite this

@inproceedings{f814fb01e88f4351ab580d45c62be7b8,

title = "Temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements",

abstract = "The time-averaged hole drift mobility in As2S3 glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. Tile hole mobility was found to be thermally activated at high temperatures, of the order of 10(-10) cm(2) /V sec at 300 K, and almost temperature independent below similar to 130 K.",

author = "Andriesh, \{A M\} and Culeac, \{I P\} and Ewen, \{P J S\} and Owen, \{A E\}",

year = "1997",

language = "English",

isbn = "0-7803-3804-9",

pages = "45--48",

booktitle = "CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1997 International Semiconductor Conference (CAS 97) ; Conference date: 07-10-1997 Through 11-10-1997",

}

Andriesh, AM, Culeac, IP, Ewen, PJS & Owen, AE 1997, Temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements. in CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2. Institute of Electrical and Electronics Engineers, NEW YORK, pp. 45-48, 1997 International Semiconductor Conference (CAS 97), SINAIA, 7/10/97.

Temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements. / Andriesh, A M ; Culeac, I P ; Ewen, P J S et al.
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2. NEW YORK: Institute of Electrical and Electronics Engineers, 1997. p. 45-48.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements

AU - Andriesh, A M

AU - Culeac, I P

AU - Ewen, P J S

AU - Owen, A E

PY - 1997

Y1 - 1997

N2 - The time-averaged hole drift mobility in As2S3 glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. Tile hole mobility was found to be thermally activated at high temperatures, of the order of 10(-10) cm(2) /V sec at 300 K, and almost temperature independent below similar to 130 K.

AB - The time-averaged hole drift mobility in As2S3 glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. Tile hole mobility was found to be thermally activated at high temperatures, of the order of 10(-10) cm(2) /V sec at 300 K, and almost temperature independent below similar to 130 K.

M3 - Conference contribution

SN - 0-7803-3804-9

SP - 45

EP - 48

BT - CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2

PB - Institute of Electrical and Electronics Engineers

CY - NEW YORK

T2 - 1997 International Semiconductor Conference (CAS 97)

Y2 - 7 October 1997 through 11 October 1997

ER -

Temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements

Abstract

Conference

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