Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang; Y. Li; J. Murray; A.S. Bunting; S. Smith; C.C. Dunare; J.T.M. Stevenson; M.P. Desmulliez; A.J. Walton

doi:10.1109/ICMTS.2013.6528142

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang, Y. Li, J. Murray, A.S. Bunting, S. Smith, C.C. Dunare, J.T.M. Stevenson, M.P. Desmulliez, A.J. Walton

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Pages	37-42
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2013.6528142
Publication status	Published - 2013

Keywords

copper
electroplating
integrated circuit interconnections
photoresists
three-dimensional integrated circuits
Cu
Kelvin contact resistance structures
Kelvin test structures
bottom-up electroplating
contact chain test structures
electrical evaluation
high aspect ratio TSV arrays
planarised sacrificial photoresist
size 240 mum
size 6 cm
through-silicon-via technology
Daisy chain
Kelvin structure
TSV
photoresist CMP

Access to Document

10.1109/ICMTS.2013.6528142

1 Finished

SMART microsystems
Walton, A.
EPSRC
1/04/10 → 28/02/15
Project: Research

Cite this

Zhang, R., Li, Y., Murray, J., Bunting, A. S., Smith, S., Dunare, C. C., Stevenson, J. T. M., Desmulliez, M. P., & Walton, A. J. (2013). Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. In Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on (pp. 37-42) https://doi.org/10.1109/ICMTS.2013.6528142

@inproceedings{f65ad1ddf97c444e8c66f2182629d70c,

title = "Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist",

keywords = "copper, electroplating, integrated circuit interconnections, photoresists, three-dimensional integrated circuits, Cu, Kelvin contact resistance structures, Kelvin test structures, bottom-up electroplating, contact chain test structures, electrical evaluation, high aspect ratio TSV arrays, planarised sacrificial photoresist, size 240 mum, size 6 cm, through-silicon-via technology, Daisy chain, Kelvin structure, TSV, photoresist CMP",

author = "R. Zhang and Y. Li and J. Murray and A.S. Bunting and S. Smith and C.C. Dunare and J.T.M. Stevenson and M.P. Desmulliez and A.J. Walton",

year = "2013",

doi = "10.1109/ICMTS.2013.6528142",

language = "English",

pages = "37--42",

booktitle = "Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on",

}

Zhang, R, Li, Y, Murray, J, Bunting, AS, Smith, S, Dunare, CC, Stevenson, JTM, Desmulliez, MP & Walton, AJ 2013, Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. in Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on. pp. 37-42. https://doi.org/10.1109/ICMTS.2013.6528142

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. / Zhang, R.; Li, Y.; Murray, J.; Bunting, A.S.; Smith, S.; Dunare, C.C.; Stevenson, J.T.M.; Desmulliez, M.P.; Walton, A.J.

Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on. 2013. p. 37-42.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

AU - Zhang, R.

AU - Li, Y.

AU - Murray, J.

AU - Bunting, A.S.

AU - Smith, S.

AU - Dunare, C.C.

AU - Stevenson, J.T.M.

AU - Desmulliez, M.P.

AU - Walton, A.J.

PY - 2013

Y1 - 2013

KW - copper

KW - electroplating

KW - integrated circuit interconnections

KW - photoresists

KW - three-dimensional integrated circuits

KW - Cu

KW - Kelvin contact resistance structures

KW - Kelvin test structures

KW - bottom-up electroplating

KW - contact chain test structures

KW - electrical evaluation

KW - high aspect ratio TSV arrays

KW - planarised sacrificial photoresist

KW - size 240 mum

KW - size 6 cm

KW - through-silicon-via technology

KW - Daisy chain

KW - Kelvin structure

KW - TSV

KW - photoresist CMP

U2 - 10.1109/ICMTS.2013.6528142

DO - 10.1109/ICMTS.2013.6528142

M3 - Conference contribution

SP - 37

EP - 42

BT - Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on

ER -

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

Keywords

Access to Document

SMART microsystems

Cite this