Test structures for hillock growth, via filling and for measuring the quality of thin films

D J  Bennett; A  OHara; I  Underwood; Anthony Walton

Test structures for hillock growth, via filling and for measuring the quality of thin films

D J Bennett
, A OHara
, I Underwood
, Anthony Walton

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A test structure for assessing the quality of thin aluminium films is described. An analysis of the relationship between grain structure and hillock growth in small exposed areas of thin films during high temperature processing shows that there is a relationship between hillock growth, grain size and,cain boundary structure. The test structure consists of arrays of via holes of various sizes etched in a thin layer of SiO2 deposited at low temperature onto the metal surface. After furnace annealing,, the number of vias of each size which contain hillocks can be interpreted to obtain information on film quality.

Original language	English
Title of host publication	1997 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES - PROCEEDINGS
Place of Publication	NEW YORK
Publisher	Jackson Environment Institute, University of East Anglia
Pages	11-15
Number of pages	5
ISBN (Print)	0-7803-3244-X
Publication status	Published - 1997
Event	1997 IEEE International Conference on Microelectronic Test Structures - MONTEREY Duration: 17 Mar 1997 → 20 Mar 1997

Conference

Conference	1997 IEEE International Conference on Microelectronic Test Structures
City	MONTEREY
Period	17/03/97 → 20/03/97

Cite this

@inproceedings{dee4e64419304444afb9a1b369ab6f49,

title = "Test structures for hillock growth, via filling and for measuring the quality of thin films",

abstract = "A test structure for assessing the quality of thin aluminium films is described. An analysis of the relationship between grain structure and hillock growth in small exposed areas of thin films during high temperature processing shows that there is a relationship between hillock growth, grain size and,cain boundary structure. The test structure consists of arrays of via holes of various sizes etched in a thin layer of SiO2 deposited at low temperature onto the metal surface. After furnace annealing,, the number of vias of each size which contain hillocks can be interpreted to obtain information on film quality.",

author = "Bennett, \{D J\} and A OHara and I Underwood and Anthony Walton",

year = "1997",

language = "English",

isbn = "0-7803-3244-X",

pages = "11--15",

booktitle = "1997 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES - PROCEEDINGS",

publisher = "Jackson Environment Institute, University of East Anglia",

note = "1997 IEEE International Conference on Microelectronic Test Structures ; Conference date: 17-03-1997 Through 20-03-1997",

}

Bennett, DJ, OHara, A, Underwood, I & Walton, A 1997, Test structures for hillock growth, via filling and for measuring the quality of thin films. in 1997 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES - PROCEEDINGS. Jackson Environment Institute, University of East Anglia, NEW YORK, pp. 11-15, 1997 IEEE International Conference on Microelectronic Test Structures, MONTEREY, 17/03/97.

Test structures for hillock growth, via filling and for measuring the quality of thin films. / Bennett, D J ; OHara, A ; Underwood, I et al.
1997 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES - PROCEEDINGS. NEW YORK: Jackson Environment Institute, University of East Anglia, 1997. p. 11-15.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Test structures for hillock growth, via filling and for measuring the quality of thin films

AU - Bennett, D J

AU - OHara, A

AU - Underwood, I

AU - Walton, Anthony

PY - 1997

Y1 - 1997

N2 - A test structure for assessing the quality of thin aluminium films is described. An analysis of the relationship between grain structure and hillock growth in small exposed areas of thin films during high temperature processing shows that there is a relationship between hillock growth, grain size and,cain boundary structure. The test structure consists of arrays of via holes of various sizes etched in a thin layer of SiO2 deposited at low temperature onto the metal surface. After furnace annealing,, the number of vias of each size which contain hillocks can be interpreted to obtain information on film quality.

AB - A test structure for assessing the quality of thin aluminium films is described. An analysis of the relationship between grain structure and hillock growth in small exposed areas of thin films during high temperature processing shows that there is a relationship between hillock growth, grain size and,cain boundary structure. The test structure consists of arrays of via holes of various sizes etched in a thin layer of SiO2 deposited at low temperature onto the metal surface. After furnace annealing,, the number of vias of each size which contain hillocks can be interpreted to obtain information on film quality.

M3 - Conference contribution

SN - 0-7803-3244-X

SP - 11

EP - 15

BT - 1997 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES - PROCEEDINGS

PB - Jackson Environment Institute, University of East Anglia

CY - NEW YORK

T2 - 1997 IEEE International Conference on Microelectronic Test Structures

Y2 - 17 March 1997 through 20 March 1997

ER -

Test structures for hillock growth, via filling and for measuring the quality of thin films

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