The dependence of the Schottky barrier height on carbon nanotube diameter for Pd-carbon nanotube contacts

Johannes Svensson, Abdelrahim A. Sourab, Yury Tarakanov, Dong Su Lee, Seung Joo Park, Seung Jae Baek, Yung Woo Park, Eleanor E. B. Campbell

Research output: Contribution to journalArticlepeer-review

Abstract

Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heights generally decrease with increasing diameter of the nanotubes and they are in agreement with the values expected when assuming little or no influence of Fermi level pinning.

Original languageEnglish
Article number175204
Number of pages5
JournalNanotechnology
Volume20
Issue number17
DOIs
Publication statusPublished - 29 Apr 2009

Keywords

  • CNT FIELD-EFFECT TRANSISTORS
  • WORK FUNCTION
  • THERMIONIC EMISSION
  • METAL

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