The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes

N. O. V. Plank, L. Jiang, A. M. Gundlach, Rebecca Cheung

Research output: Contribution to journal › Article › peer-review

Cite this

@article{6633c191c4a3439daf5811ceac39499d,

title = "The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes",

author = "Plank, {N. O. V.} and L. Jiang and Gundlach, {A. M.} and Rebecca Cheung",

year = "2003",

language = "Undefined/Unknown",

volume = "433-436",

pages = "689--692",

journal = "Materials Science Forum",

publisher = "Trans Tech Publications",

}