The etching of silicon carbide in inductively coupled SF6/O2 plasma

N. O. V. Plank, M. A. Blauw, E. van der Drift, Rebecca Cheung

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	482-487
Number of pages	6
Journal	Journal of Physics D: Applied Physics
Volume	2003
Issue number	36
Publication status	Published - 2003

Cite this

@article{0ccc89d609e341dab5fc7207660f678f,

title = "The etching of silicon carbide in inductively coupled SF6/O2 plasma",

author = "Plank, \{N. O. V.\} and Blauw, \{M. A.\} and Drift, \{E. van der\} and Rebecca Cheung",

year = "2003",

language = "English",

volume = "2003",

pages = "482--487",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "36",

}