TY - JOUR
T1 - The Limits to 'Spin-Off'
T2 - UK Defence R and D and the Development of Gallium Arsenide Technology
AU - Spinardi, Graham
PY - 2012
Y1 - 2012
N2 - UK defence R & D played a leading role in the development of gallium arsenide and other III–V semiconductor materials. Often touted as the semiconductor of the future because of its potential for high-speed computing, gallium arsenide had unique properties compared to silicon that made it attractive for military applications. Some consumer applications were also developed, and these eventually became significant with its use in mobile phone handsets in the mid-1990s. However, despite the apparent advantage of close links to the defence establishments and early access to expertise in III–V technologies, UK companies had limited success in these civil markets, preferring instead to focus on defence procurement.
AB - UK defence R & D played a leading role in the development of gallium arsenide and other III–V semiconductor materials. Often touted as the semiconductor of the future because of its potential for high-speed computing, gallium arsenide had unique properties compared to silicon that made it attractive for military applications. Some consumer applications were also developed, and these eventually became significant with its use in mobile phone handsets in the mid-1990s. However, despite the apparent advantage of close links to the defence establishments and early access to expertise in III–V technologies, UK companies had limited success in these civil markets, preferring instead to focus on defence procurement.
UR - http://www.scopus.com/inward/record.url?scp=84857841424&partnerID=8YFLogxK
U2 - 10.1017/S000708741100063X
DO - 10.1017/S000708741100063X
M3 - Article
VL - 45
SP - 97
EP - 121
JO - British Journal for the History of Science
JF - British Journal for the History of Science
SN - 0007-0874
IS - 1
ER -