The Role of Membrane Threshold amp; Rate in STDP Silicon Neuron Circuit Simulation

Juan (Annie) Huo; Alan Murray

The Role of Membrane Threshold amp; Rate in STDP Silicon Neuron Circuit Simulation

Juan (Annie) Huo, Alan Murray

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Spike-timing dependent synaptic plasticity (STDP) circuitry is designed in 0.35µm CMOS VLSI. By setting different circuit parameters and generating diverse spike inputs, we got different steady weight distributions. Through analysing these simulation results, we show the effect of membrane threshold and input rate in STDP adaptation.

Original language	English
Title of host publication	International Conference on Artificial Neural Networks(ICANN '05)
Pages	1009-1014
Number of pages	16
Publication status	Published - 2005

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title = "The Role of Membrane Threshold amp; Rate in STDP Silicon Neuron Circuit Simulation",

abstract = "Spike-timing dependent synaptic plasticity (STDP) circuitry is designed in 0.35µm CMOS VLSI. By setting different circuit parameters and generating diverse spike inputs, we got different steady weight distributions. Through analysing these simulation results, we show the effect of membrane threshold and input rate in STDP adaptation.",

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AB - Spike-timing dependent synaptic plasticity (STDP) circuitry is designed in 0.35µm CMOS VLSI. By setting different circuit parameters and generating diverse spike inputs, we got different steady weight distributions. Through analysing these simulation results, we show the effect of membrane threshold and input rate in STDP adaptation.

M3 - Conference contribution

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EP - 1014

BT - International Conference on Artificial Neural Networks(ICANN '05)

ER -

The Role of Membrane Threshold amp; Rate in STDP Silicon Neuron Circuit Simulation

Abstract

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