Time-Domain Modeling of Low-Frequency Noise in Deep-Submicrometer MOSFET

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	233-245
Number of pages	13
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	55/1
Publication status	Published - 1 Feb 2008

Meeting the design challenges of the nano-CMOS electronics
Murray, A. (Principal Investigator) & Berry, D. (Co-investigator)
EPSRC
1/12/06 → 28/02/11
Project: Research

Cite this

@article{a6570fb58f694e829721082fef685716,

title = "Time-Domain Modeling of Low-Frequency Noise in Deep-Submicrometer MOSFET",

author = "Hamid, \{N. H.\} and Alan Murray and S. Roy",

year = "2008",

month = feb,

day = "1",

language = "English",

volume = "55/1",

pages = "233--245",

journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",

publisher = "Institute of Electrical and Electronics Engineers",

}