Abstract / Description of output
In recent years, the increased working set size of applications craves for more memory demand in terms of large size Last Level Caches (LLC). To fulfill this, embedded DRAM (eDRAM) caches have been considered as one of the best alternatives over conventional SRAM caches. eDRAM has a property of low leakage and provides more capacity in the same area footprint of SRAM. However, its retention period consumes significant refresh energy in the periodic refresh. In this paper, we present an approach to minimize the total energy spent on refreshes by considering the presence of private blocks in the LLC. Our approach restricts refreshing of those blocks that are loaded exclusively from the main memory on an LLC miss. Experimental result using full system simulation show 55% reduction in the total number of refreshes compared to baseline policy; and 62% reduction in total power consumption over SRAM.
Original language | English |
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Title of host publication | Proceedings of the 2019 on Great Lakes Symposium on VLSI |
Place of Publication | New York, NY, USA |
Publisher | ACM Association for Computing Machinery |
Pages | 225–230 |
Number of pages | 6 |
ISBN (Print) | 9781450362528 |
DOIs | |
Publication status | Published - 13 May 2019 |
Event | 29th ACM Great Lakes Symposium on VLSI - Washington D.C., United States Duration: 9 May 2019 → 11 May 2019 Conference number: 29 https://www.glsvlsi.org/archive/glsvlsi19/index.html |
Publication series
Name | GLSVLSI '19 |
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Publisher | Association for Computing Machinery |
ISSN (Print) | 1066-1395 |
Conference
Conference | 29th ACM Great Lakes Symposium on VLSI |
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Abbreviated title | GLSVLSI 2019 |
Country/Territory | United States |
City | Washington D.C. |
Period | 9/05/19 → 11/05/19 |
Internet address |
Keywords / Materials (for Non-textual outputs)
- embedded dram
- private blocks
- last level cache
- refresh energy